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EP 0297778 A3 1991-04-03     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Title (OT): Vorrichtung mit resonanter Tunneleffektanordnung, deren Strom-Spannungs-Charakteristik mehrere Spitzen hat. Title (OT): Appareil comprenant un dispositif à effet tunnel résonnant ayant des caractéristiques courant/tension à plusieurs pointes. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH   CAPASSO, FEDERICO;   YI CHO, ALFRED;   SEN, SUSANTA;   SHOJI, MASAKAZU;   SIVCO, DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US)   AMERICAN TELEPHONE AND TELEGRAPH COMPANY Application Number: EP19880305716 1988-06-22 Application Number: 88305716 -- Priority Number(s): US19870068974 1987-07-01   68974 -- EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16; Y01N4/00 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: H01L29/02; G11C11/56; H01L21/70; H01L27/085; H01L27/10; H01L29/66; H03B19/00; H03K5/00; H03K17/56; H03K19/20; H03M13/00 AI-Classification: H01L29/201; G11C11/56; H01L21/8238; H01L27/092; H01L27/10; H01L29/205; H01L29/66; H01L29/76; H01L29/88; H03B19/16; H03K5/00; H03K17/58; H03K19/20; H03M13/00  EP 0297778 A2 1989-01-04     Title (TI): Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics. Title (OT): Vorrichtung mit resonanter Tunneleffektanordnung, deren Strom-Spannungs-Charakteristik mehrere Spitzen hat. Title (OT): Appareil comprenant un dispositif à effet tunnel résonnant ayant des caractéristiques courant/tension à plusieurs pointes. Inventor: CAPASSO FEDERICO;   YI CHO ALFRED;   SEN SUSANTA;   SHOJI MASAKAZU;   SIVCO DEBORAH   CAPASSO, FEDERICO;   YI CHO, ALFRED;   SEN, SUSANTA;   SHOJI, MASAKAZU;   SIVCO, DEBORAH Applicant: AMERICAN TELEPHONE & TELEGRAPH (US)   AMERICAN TELEPHONE AND TELEGRAPH COMPANY Application Number: EP19880305716 1988-06-22 Application Number: 88305716 -- Priority Number(s): US19870068974 1987-07-01   68974 -- EPC-Classification: G11C11/56; H01L29/76C; H01L29/88R; H03B19/16; Y01N4/00 IPC-Classification: G11C11/34; G11C11/56; H01L27/06; H01L29/205; H01L29/88; H03B19/16 CI-Classification: H01L29/02; G11C11/56; H01L21/70; H01L27/085; H01L27/10; H01L29/66; H03B19/00; H03K5/00; H03K17/56; H03K19/20; H03M13/00 AI-Classification: H01L29/201; G11C11/56; H01L21/8238; H01L27/092; H01L27/10; H01L29/205; H01L29/66; H01L29/76; H01L29/88; H03B19/16; H03K5/00; H03K17/58; H03K19/20; H03M13/00

EP 0297778    KR 0134096 B1 1998-04-20      JP 1929398 C 1995-05-12      JP 6052789 B 1994-07-06      KR 930002817 B1 1993-04-10      CA 1284234 C 1991-05-14      CA 1282871 C 1991-04-09      EP 0297778 A3 1991-04-03      EP 0320110 A3 1990-05-09      US 4902912 A 1990-02-20      JP 2003142 A 1990-01-08      US 4853753 A 1989-08-01      EP 0320110 A2 1989-06-14      JP 1039768 A 1989-02-10      EP 0297778 A2 1989-01-04

Cited Documents

Citatory Documents

Non Patent Literature
SR: ELECTRONICS LETTERS, vol. 23, no. 5, 26th February 1987, pages 225-226; F. CAPASSO et al.: "Resonant tunnelling gate field-effect transistor" SR: IEEE ELECTRON DEVICE LETTERS, vol. EDL-8, no. 7, July 1987, pages 297-299; F. CAPASSO et al.: "Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications" SR: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-34, no. 10, October 1987, pages 2185-2191; S. SEN et al.: "Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity"
EP 0320110 A3 1990-05-09     Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Title (OT): Speicheranordnung mit einer Halbleiterdiode mit resonantem Tunneleffekt und Wirkungsweise. Title (OT): Dispositif de mémoire comprenant une diode semi-conductrice à effet tunnel résonnant et mode opératoire. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA   CAPASSO, FEDERICO;   CHO, ALFRED YI;   SEN, SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US)   AMERICAN TELEPHONE AND TELEGRAPH COMPANY Application Number: EP19880310336 1988-11-03 Application Number: 88310336 -- Priority Number(s): US19870117583 1987-11-05   117583 -- EPC-Classification: G11C11/38; G11C11/56; H01L29/88R; Y01N4/00 IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L27/10; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L27/10; H01L29/80; H01L29/88  EP 0320110 A2 1989-06-14  SR   Title (TI): Memory device comprising a resonant-tunneling semiconductor diode and mode of operation. Title (OT): Speicheranordnung mit einer Halbleiterdiode mit resonantem Tunneleffekt und Wirkungsweise. Title (OT): Dispositif de mémoire comprenant une diode semi-conductrice à effet tunnel résonnant et mode opératoire. Inventor: CAPASSO FEDERICO;   CHO ALFRED YI;   SEN SUSANTA   CAPASSO, FEDERICO;   CHO, ALFRED YI;   SEN, SUSANTA Applicant: AMERICAN TELEPHONE & TELEGRAPH (US)   AMERICAN TELEPHONE AND TELEGRAPH COMPANY Application Number: EP19880310336 1988-11-03 Application Number: 88310336 -- Priority Number(s): US19870117583 1987-11-05   117583 -- EPC-Classification: G11C11/38; G11C11/56; H01L29/88R; Y01N4/00 IPC-Classification: G11C11/38; G11C11/56; H01L27/06; H01L29/205; H01L29/88 CI-Classification: G11C11/36; G11C11/56; H01L27/10; H01L29/66 AI-Classification: G11C11/38; G11C11/56; H01L27/10; H01L29/80; H01L29/88  DE 2607940 A1 1977-09-08  SR   Title (OT): MEHRSCHICHTIGES HALBLEITERBAUELEMENT Inventor: TSU RAPHAEL   TSU,RAPHAEL Applicant: MAX PLANCK GESELLSCHAFT   MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V Application Number: DE19762607940 1976-02-27 Priority Number(s): DE19762607940 1976-02-27 EPC-Classification: H01L21/203C; H01L21/363; H01L29/15B2C; H01L29/165; H01L29/205; H01L29/76C IPC-Classification: H01L29/267 CI-Classification: H01L21/02; H01L29/02; H01L29/66 AI-Classification: H01L29/66; H01L21/203; H01L21/331; H01L21/363; H01L29/15; H01L29/165; H01L29/205; H01L29/73; H01L29/76; H01L29/88	EP 0708487 B1 2001-08-29  CA   Title (TI): Memory device Title (OT): Speicheranordnung Title (OT): Dispositif de mémoire Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB)   ALPHENAAR, BRUCE;   DURRANI, ZAHID ALI KHAN Applicant: HITACHI EUROP LTD (GB)   HITACHI EUROPE LIMITED Application Number: EP19950304591 1995-06-29 Application Number: 95304591 -- Priority Number(s): GB19940021138 1994-10-20   9421138 -- EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R; Y01N4/00 IPC-Classification: H01L29/88; H01L27/102 CI-Classification: H01L27/10; G11C11/56; H01L27/102; H01L29/66 AI-Classification: H01L27/10; G11C11/56; H01L27/102; H01L29/88  EP 0364987 B1 1996-05-22     Title (TI): Semiconductor device. Title (OT): Halbleitervorrichtung. Title (OT): Dispositif à semi-conducteur. Inventor: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU   TANOUE, TOMONORI;   MIZUTA, HIROSHI;   TAKAHASHI, SUSUMU Applicant: HITACHI LTD (JP)   HITACHI, LTD Application Number: EP19890119349 1989-10-18 Application Number: 89119349 -- Priority Number(s): JP19890001390 1989-01-10   JP19880263892 1988-10-21   26389288; --   139089; --   263892/88; --   1390/89 -- EPC-Classification: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56; Y01N4/00 IPC-Classification: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Classification: G02F3/00; G06N3/00; G11C11/56 AI-Classification: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0708487 A1 1996-04-24  CA   Title (TI): Memory device Title (OT): Speicheranordnung Title (OT): Dispositif de mémoire Inventor: ALPHENAAR BRUCE (GB);   DURRANI ZAHID ALI KHAN (GB)   ALPHENAAR, BRUCE;   DURRANI, ZAHID ALI KHAN Applicant: HITACHI EUROP LTD (GB)   HITACHI EUROPE LIMITED Application Number: EP19950304591 1995-06-29 Application Number: 95304591 -- Priority Number(s): GB19940021138 1994-10-20   9421138 -- EPC-Classification: G11C11/56; H01L27/102D; H01L29/88R; Y01N4/00 IPC-Classification: H01L29/88; H01L27/102 CI-Classification: H01L27/10; G11C11/56; H01L27/102; H01L29/66 AI-Classification: H01L27/10; G11C11/56; H01L27/102; H01L29/88  EP 0364987 A3 1991-03-13     Title (TI): Semiconductor device. Title (OT): Halbleitervorrichtung. Title (OT): Dispositif à semi-conducteur. Inventor: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU   TANOUE, TOMONORI;   MIZUTA, HIROSHI;   TAKAHASHI, SUSUMU Applicant: HITACHI LTD (JP)   HITACHI, LTD Application Number: EP19890119349 1989-10-18 Application Number: 89119349 -- Priority Number(s): JP19890001390 1989-01-10   JP19880263892 1988-10-21   26389288; --   139089; --   263892/88; --   1390/89 -- EPC-Classification: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56; Y01N4/00 IPC-Classification: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Classification: G02F3/00; G06N3/00; G11C11/56 AI-Classification: G02F3/02; G06N3/063; G06N3/067; G11C11/56  EP 0364987 A2 1990-04-25  SR   Title (TI): Semiconductor device. Title (OT): Halbleitervorrichtung. Title (OT): Dispositif à semi-conducteur. Inventor: TANOUE TOMONORI;   MIZUTA HIROSHI;   TAKAHASHI SUSUMU   TANOUE, TOMONORI;   MIZUTA, HIROSHI;   TAKAHASHI, SUSUMU Applicant: HITACHI LTD (JP)   HITACHI, LTD Application Number: EP19890119349 1989-10-18 Application Number: 89119349 -- Priority Number(s): JP19890001390 1989-01-10   JP19880263892 1988-10-21   26389288; --   139089; --   263892/88; --   1390/89 -- EPC-Classification: G02F3/02S; G06N3/063A; G06N3/067E; G11C11/56; Y01N4/00 IPC-Classification: G02F3/02; G06E3/00; G06F15/06; G06G7/60; G11C11/56 CI-Classification: G02F3/00; G06N3/00; G11C11/56 AI-Classification: G02F3/02; G06N3/063; G06N3/067; G11C11/56